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| EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 http://onsemi.com 3 R1 2 R2 1 R2 R1 4 Q2 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary BRT devices are housed in the SOT-553 package which is ideal for low power surface mount applications where board space is at a premium. Features 5 5 1 * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb-Free Devices SOT-553 CASE 463B MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Ux = Specific Device Code x = C, 3, E, or 5 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Ux M G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 October, 2005 - Rev. 4 Publication Order Number: EMC2DXV5T1/D EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 THERMAL CHARACTERISTICS Characteristic ONE JUNCTION HEATED Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient BOTH JUNCTIONS HEATED Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad PD 500 (Note 1) 4.0 (Note 1) RqJA TJ, Tstg 250 (Note 1) -55 to +150 mW mW/C C/W C PD 357 (Note 1) 2.9 (Note 1) RqJA 350 (Note 1) mW mW/C C/W Symbol Max Unit DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES Transistor 1 - PNP Device EMC2DXV5T1 EMC2DXV5T1G EMC2DXV5T5 EMC2DXV5T5G EMC3DXV5T1 EMC3DXV5T1G EMC3DXV5T5 EMC3DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4DXV5T5G EMC5DXV5T1 EMC5DXV5T1G EMC5DXV5T5 EMC5DXV5T5G U5 4.7 10 47 47 UE 10 47 47 47 U3 10 10 10 10 UC 22 22 22 22 Marking R1 (K) R2 (K) Transistor 2 - NPN R1 (K) R2 (K) Package SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* SOT-553* 8000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel 4000 / Tape & Reel 8000 / Tape & Reel 4000 / Tape & Reel Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free. 250 200 PD , POWER DISSIPATION (MILLIWATTS) 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 2 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1 EMC5DXV5T1 ICBO ICEO IEBO - - - - - - - - - - - - 100 500 0.2 0.5 0.2 1.0 nAdc nAdc mAdc Symbol Min Typ Max Unit ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1 EMC5DXV5T1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 80 20 - - 4.9 15.4 7.0 3.3 0.8 0.8 0.17 0.38 - - 100 60 140 35 - - - 22 10 4.7 1.0 1.0 0.21 0.47 - - - - - - 0.25 0.2 - 28.6 13 6.1 1.2 1.2 0.25 0.56 Vdc Vdc Vdc kW Vdc Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor EMC2DXV5T1 EMC3DXV5T1, EMC4DXV5T1 EMC5DXV5T1 EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1 EMC5DXV5T1 VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1, EMC5DXV5T1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 80 - - 4.9 15.4 7.0 33 0.8 0.8 0.8 - - 100 60 140 - - - 22 10 47 1.0 1.0 1.0 - - - - - 0.25 0.2 - 28.6 13 61 1.2 1.2 1.2 Vdc Vdc Vdc kW Vdc Vdc EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1, EMC5DXV5T1 ICBO ICEO IEBO - - - - - - - - - - 100 500 0.2 0.5 0.1 nAdc nAdc mAdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1, EMC5DXV5T1 EMC2DXV5T1 EMC3DXV5T1 EMC4DXV5T1, EMC5DXV5T1 VCE(SAT) VOL VOH R1 Resistor Ratio R1/R2 http://onsemi.com 3 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC2DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25C 100 75C 10 25C TA = -25C C ob , CAPACITANCE (pF) 3 2 1 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC2DXV5T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C hFE , DC CURRENT GAIN 25C 0.1 75C 1000 VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 100 75C 10 1 0.1 0.01 25C TA = -25C C ob, CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 5 6 7 4 Vin, INPUT VOLTAGE (V) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC3DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz lE = 0 mA TA = 25C 100 75C 25C TA = -25C C ob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (V) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC3DXV5T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C hFE , DC CURRENT GAIN 25C 75C 1000 VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 100 10 1 0.1 0.01 75C 25C TA = -25C C ob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (V) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 7 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS -EMC4DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (V) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (V) 8 10 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C +12 V 75C 1 Typical Application for PNP BRTs LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0.1 Figure 26. Input Voltage versus Output Current Figure 27. Inexpensive, Unregulated Current Source http://onsemi.com 8 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC5DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN 100 1000 VCE = 10 V TA = 75C -25C 25C TA = 75C 0.1 -25C 25C 10 0.01 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 60 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 28. VCE(sat) versus IC Figure 29. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 10 C ob , CAPACITANCE (pF) 8 6 4 SERIES 1 2 0 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (V) 40 45 f = 1 MHz IE = 0 mA TA = 25C 100 75C 10 1 VO = 5 V 0.1 TA = -25C 25C 0 2 4 6 8 Vin, INPUT VOLTAGE (V) 10 12 0.01 Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage http://onsemi.com 9 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS - EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (V) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 50 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 10 EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 PACKAGE DIMENSIONS SOT-553 XV5 SUFFIX CASE 463B-01 ISSUE B D -X- A L 4 5 1 2 3 E -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.059 0.063 HE DIM A b c D E e L HE e b 5 PL 0.08 (0.003) c M XY MIN 0.020 0.007 0.003 0.059 0.043 MAX 0.024 0.011 0.007 0.067 0.051 0.012 0.067 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 11 EMC2DXV5T1/D |
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